Devices · 5h ago
SMIC's third-gen 7nm node rivals TSMC N6 density without EUV
SMIC's N+3 process achieves transistor density comparable to TSMC's N6, despite lacking EUV lithography. The node shows a smaller metal pitch than Intel's upcoming 18A, but performance and efficiency lag behind modern nodes. This marks a significant advancement for Chinese semiconductor manufacturing under US export restrictions.
Meridian48 take
The density comparison is impressive, but without EUV, SMIC's N+3 likely sacrifices performance and yield, limiting its competitiveness against leading-edge nodes.
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SMIC's third-gen 7nm node shows smaller metal pitch than Intel 18A, higher transistor density than TSMC N6 without EUV — analysis of N+3 shows significant advancement for Chinese semi manufacturing →
Tom's Hardware
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